Chemical Vapor Deposition
AME P5000 – Dedicated PECVD (Plasma Enhanced CVD) chambers for TEOS oxide and silicon nitride. TEOS non-uniformity <2%. Silicon nitride non-uniformity <7%. Variable stress control and wide range of thicknesses possible. Suitable for 100 & 150 mm silicon substrates.
AMC LPCVD – One tube for LTO (Low Temperature Oxide), one tube for silicon nitride/poly-Si. Surface non-uniformity ~10%. Suitable for 100 & 150 mm Silicon or glass substrates.
CambridgeNanoTech ALD – Atomic Layer Depositions – high precision, conformal coatings. Capable of depositing SiO2, Al2O3, HfO2. Suitable for most substrate types and sizes.