Thermal Process & Implant
Bruce Furnace – Dedicated tubes for processes up to 1100˚. Dopant drive in: N-Type tube, P-Type tube. Thermal oxidation: Dry O2 tube, Wet O2 tube, Trans Cl also available for oxide growth. Tubes also available for contamination risk and metal annealing. Suitable for 100 & 150 mm silicon or SiO2 substrates.
SSI RTA – Rapid Theramal Annealer/Processor capable of 5-200˚C per second ramps, excellent temperature control: overshoot of less than 10˚ possible. Maximum temperature of 1200˚. Process gases: Ar, O2. Accepts many substrate sizes, best results achieved with 100 & 150 mm diameter silicon substrates. No metals or other potential contaminants.
AG 610A RTP – Rapid Thermal Annealer/Processor capable of 5-100˚C per second ramps, maximum of 1100˚C. Best for contamination risk processes, metal anneals, etc...
Varian 350D Ion Implanter – Boron and phosphorus dopants, 1E12 – 5E15. Dosing at 10 KeV to 200 KeV. Suitable for silicon and glass substrates 100 & 150 mm diameter.